2SA1930,LBS2DIAQ(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1930 is a silicon PNP epitaxial planar power transistor designed for high-frequency amplifier applications. It features a maximum collector-emitter voltage of -180 V and a continuous collector current rating of -2 A at an ambient temperature of 25°C. The device achieves a typical transition frequency (fT) of 200 MHz, ensuring effective performance in driver stages. It operates within a junction temperature range of -55°C to 150°C and utilizes a TO-220 package.

Single Bipolar Transistors Feature Summary

• High transition frequency capability for efficient signal amplification
• Designed as the complementary counterpart to the 2SC5171 NPN transistor
• Suitable for use in power amplifier circuits and driver stage configurations

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status directly with the manufacturer or authorized distributor prior to procurement. Ensure that the component is sourced from verified channels to guarantee authenticity and adherence to specified reliability standards.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring a high-voltage PNP transistor with significant bandwidth capabilities. The device is appropriate for applications demanding a reliable complementary match to the 2SC5171 NPN transistor. Evaluate thermal management requirements carefully, as the maximum power dissipation is highly dependent on the case temperature conditions during operation.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SA series of silicon PNP epitaxial transistors. These devices are engineered for general-purpose power amplification tasks. The 2SA1930 specifically addresses the need for high-speed switching and linear amplification in audio and RF driver stages, providing a robust solution for medium-power electronic designs.

Single Bipolar Transistors Replacement Considerations

The 2SC5171 serves as the designated complementary NPN transistor for push-pull configurations. Verify pinout compatibility and absolute maximum ratings before substituting other generic PNP transistors in existing circuit layouts.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SA1930?

The typical transition frequency (fT) is 200 MHz.

Is the 2SA1930 intended for medical or safety-critical applications?

No, it is intended for general electronics applications and should not be used in equipment requiring extraordinarily high quality or reliability, such as medical instruments or safety devices.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is -180 V.