2SA1930,ONKQ(J

Single Bipolar Transistors Overview

The Toshiba 2SA1930 is a silicon PNP epitaxial planar transistor designed for power amplifier and driver stage applications. It features a collector-emitter breakdown voltage of -180 V, a maximum collector current of -2 A, and a collector power dissipation of 2 W at 25°C case temperature. The device exhibits a typical transition frequency of 200 MHz and is electrically complementary to the 2SC5171 NPN transistor.

Single Bipolar Transistors Feature Summary

• High transition frequency capability for effective operation in audio frequency ranges
• Designed as a complementary pair with the 2SC5171 NPN transistor
• Suitable for use in power amplifier and driver stage circuits

Single Bipolar Transistors Applications

• Power amplifier applications
• Driver stage amplifier applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix ONKQ(J against the official Toshiba datasheet to confirm package type and lead finish specifications. Ensure compliance with RoHS requirements by checking product-specific documentation. Confirm that the intended application falls within general electronics usage guidelines and does not involve unintended high-reliability sectors such as medical or aerospace equipment.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring a PNP power transistor with a -180 V collector-emitter voltage rating and a -2 A continuous current capacity. The 200 MHz transition frequency supports efficient performance in audio frequency amplification tasks. Ensure thermal management allows for proper heat dissipation to maintain junction temperatures within the specified safe operating area limits during operation.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SA series of PNP bipolar junction transistors. These devices are engineered for general-purpose power amplification and switching duties. The 2SA1930 specifically complements the 2SC5171 NPN counterpart, facilitating balanced push-pull configurations in audio output stages and similar linear amplifier topologies.

Single Bipolar Transistors Replacement Considerations

The 2SC5171 serves as the direct complementary NPN replacement for paired circuit designs. Verify pinout compatibility and electrical ratings before substituting other PNP transistors in existing layouts.

Single Bipolar Transistors FAQ

What is the complementary transistor for the 2SA1930?

The 2SA1930 is electrically complementary to the 2SC5171 NPN transistor.

What is the typical transition frequency of the 2SA1930?

The typical transition frequency (fT) is 200 MHz.

What is the maximum collector power dissipation at 25°C case temperature?

The maximum collector power dissipation is 2 W when the case temperature is maintained at 25°C.