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2SA1930,Q(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 180V 2A TO-220NIS. Review the specifications below when checking this part for your BOM.
The Toshiba Semiconductor and Storage 2SA1930 is a silicon PNP epitaxial planar transistor designed for power amplifier and driver stage applications. It features a high transition frequency of 200 MHz (typical). Absolute maximum ratings include a collector-base voltage of -180 V, collector-emitter voltage of -180 V, emitter-base voltage of -5 V, and collector current of -2 A. The device supports a junction temperature up to 150 °C and operates within a storage range of -55 to 150 °C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status by contacting sales representatives, as indicated in the documentation. Ensure designs adhere to specified operating ranges and derating concepts outlined in the Toshiba Semiconductor Reliability Handbook to maintain system safety and reliability.
Select this component for general electronics applications requiring high-frequency PNP switching or amplification. Ensure the design accommodates the -180 V breakdown voltage and -2 A current limits. Verify compatibility with complementary NPN devices like the 2SC5171 for push-pull configurations. Review absolute maximum ratings carefully to prevent reliability degradation under heavy loads.
This component belongs to the Toshiba Bipolar Small-Signal Transistors family. It is manufactured using silicon epitaxial planar technology. The device is housed in a TO-220F plastic package, weighing approximately 1.7 g. It is intended for use in computer, personal equipment, office equipment, measuring equipment, industrial robotics, and domestic appliances.
The datasheet explicitly identifies the 2SC5171 as its complementary counterpart. No other substitute part numbers are documented in the provided source material.
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