Single Bipolar Transistors 2SA1930,Q(J product image

2SA1930,Q(J

  • Description:TRANS PNP 180V 2A TO-220NIS
  • Series:-

SKU:bcf29262d6b1 Category: Brand:

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2SA1930,Q(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 180V 2A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1930,Q(J

  • Description:TRANS PNP 180V 2A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):180 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 1A
  • Current - Collector Cutoff (Max):5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • Power - Max:2 W
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1930,Q(J

2SA1930,Q(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1930 is a silicon PNP epitaxial planar transistor designed for power amplifier and driver stage applications. It features a high transition frequency of 200 MHz (typical). Absolute maximum ratings include a collector-base voltage of -180 V, collector-emitter voltage of -180 V, emitter-base voltage of -5 V, and collector current of -2 A. The device supports a junction temperature up to 150 °C and operates within a storage range of -55 to 150 °C.

Single Bipolar Transistors Feature Summary

  • High transition frequency capability for efficient signal amplification
  • Complementary pairing with the 2SC5171 NPN transistor
  • Robust thermal performance suitable for power amplifier stages

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status by contacting sales representatives, as indicated in the documentation. Ensure designs adhere to specified operating ranges and derating concepts outlined in the Toshiba Semiconductor Reliability Handbook to maintain system safety and reliability.

Single Bipolar Transistors Selection Notes

Select this component for general electronics applications requiring high-frequency PNP switching or amplification. Ensure the design accommodates the -180 V breakdown voltage and -2 A current limits. Verify compatibility with complementary NPN devices like the 2SC5171 for push-pull configurations. Review absolute maximum ratings carefully to prevent reliability degradation under heavy loads.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba Bipolar Small-Signal Transistors family. It is manufactured using silicon epitaxial planar technology. The device is housed in a TO-220F plastic package, weighing approximately 1.7 g. It is intended for use in computer, personal equipment, office equipment, measuring equipment, industrial robotics, and domestic appliances.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC5171 as its complementary counterpart. No other substitute part numbers are documented in the provided source material.

2SA1930,Q(J2SA1930,Q(J

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