2SA1931,BOSCHQ(J

Single Bipolar Transistors Overview

The Toshiba 2SA1931 is a silicon PNP epitaxial planar transistor utilizing the PCT process, designed for high-current switching applications. It features a collector-emitter breakdown voltage of -50 V and a maximum collector current of -5 A. The device achieves a low collector-emitter saturation voltage of -0.4 V (max) at -2 A collector current and -0.2 A base current. Transition frequency reaches 60 MHz, with typical storage time of 1.0 μs. Power dissipation is rated at 2 W at 25°C case temperature. It is housed in a TO-220NIS package.

Single Bipolar Transistors Feature Summary

• Utilizes PCT process technology for high-speed switching performance
• Provides low collector-emitter saturation voltage for efficient power handling
• Designed as a complementary pair to the 2SC4881 NPN transistor

Single Bipolar Transistors Applications

• High-current switching circuits
• General-purpose amplifier applications
• Complementary push-pull configurations

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision dates and specific ordering suffixes match project requirements. Ensure compliance with applicable RoHS regulations and environmental standards before integration into final designs.

Single Bipolar Transistors Selection Notes

Evaluate thermal management capabilities based on the 2 W power dissipation rating at 25°C case temperature. Consider the -50 V collector-emitter voltage limit for circuit design margins. Verify compatibility with the intended drive currents relative to the specified DC current gain ranges under varying load conditions.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SA series of PNP bipolar junction transistors. It is specifically engineered for general-purpose electronics applications requiring robust current handling and fast switching characteristics within standard industrial and consumer equipment parameters.

Single Bipolar Transistors Replacement Considerations

The 2SC4881 is documented as the complementary NPN counterpart. Direct substitution requires verifying pinout compatibility and ensuring equivalent electrical ratings meet the specific application constraints.