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2SA1931(NOMARK,A,Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 5A TO-220NIS. Review the specifications below when checking this part for your BOM.
The Toshiba Semiconductor and Storage 2SA1931 is a silicon PNP epitaxial planar transistor designed for high-current switching applications. It features a collector-emitter breakdown voltage of -50 V, a maximum collector current of -5 A, and a transition frequency of 60 MHz. The device exhibits a low saturation voltage of -0.4 V (max) at -2 A collector current and a typical storage time of 1.0 μs. Power dissipation reaches 2 W at ambient temperature and 20 W at case temperature. It utilizes a TO-220NIS package with a junction temperature rating of 150°C.
Verify the specific ordering suffix against official documentation to confirm lead-free status or marking variations. Confirm availability as product lifecycle status may change. Ensure compliance with RoHS regulations by checking the most recent manufacturer data sheet before procurement.
Select this component for circuits requiring high collector current up to 5 A and fast switching speeds. Ensure thermal management supports the specified power dissipation ratings. Verify that operating voltages remain within the -50 V collector-emitter limit. Consider complementary pairing with the 2SC4881 NPN transistor for push-pull configurations.
This component belongs to the Toshiba 2SA series of PNP bipolar junction transistors. It is manufactured using an epitaxial planar process. The device is intended for general-purpose use in consumer and industrial electronics where moderate power handling and switching speed are required.
The datasheet identifies the 2SC4881 as the complementary NPN transistor. No other direct substitute part numbers are documented in the provided source material.
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