Single Bipolar Transistors 2SA1931(NOMARK,A,Q product image

2SA1931(NOMARK,A,Q

  • Description:TRANS PNP 50V 5A TO-220NIS
  • Series:-

SKU:acab65a77559 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SA1931(NOMARK,A,Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 5A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1931(NOMARK,A,Q

  • Description:TRANS PNP 50V 5A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1A, 1V
  • Power - Max:2 W
  • Frequency - Transition:60MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1931(NOMARK,A,Q

2SA1931(NOMARK,A,Q

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1931 is a silicon PNP epitaxial planar transistor designed for high-current switching applications. It features a collector-emitter breakdown voltage of -50 V, a maximum collector current of -5 A, and a transition frequency of 60 MHz. The device exhibits a low saturation voltage of -0.4 V (max) at -2 A collector current and a typical storage time of 1.0 μs. Power dissipation reaches 2 W at ambient temperature and 20 W at case temperature. It utilizes a TO-220NIS package with a junction temperature rating of 150°C.

Single Bipolar Transistors Feature Summary

  • Low saturation voltage for efficient power handling
  • High-speed switching capability with short storage time
  • Epitaxial planar structure for reliability

Single Bipolar Transistors Applications

  • General electronics applications
  • Computer equipment
  • Industrial robotics
  • Domestic appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status or marking variations. Confirm availability as product lifecycle status may change. Ensure compliance with RoHS regulations by checking the most recent manufacturer data sheet before procurement.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high collector current up to 5 A and fast switching speeds. Ensure thermal management supports the specified power dissipation ratings. Verify that operating voltages remain within the -50 V collector-emitter limit. Consider complementary pairing with the 2SC4881 NPN transistor for push-pull configurations.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SA series of PNP bipolar junction transistors. It is manufactured using an epitaxial planar process. The device is intended for general-purpose use in consumer and industrial electronics where moderate power handling and switching speed are required.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC4881 as the complementary NPN transistor. No other direct substitute part numbers are documented in the provided source material.

2SA1931(NOMARK,A,Q2SA1931(NOMARK,A,Q

Click on the inquiry