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2SA1931,Q(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 5A TO-220NIS. Review the specifications below when checking this part for your BOM.
The Toshiba 2SA1931 is a high-current PNP silicon epitaxial transistor designed for switching applications. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 50 V, housed in a TO-220NIS through-hole package. The device exhibits a low saturation voltage of 0.4 V maximum at 2 A and a transition frequency of 60 MHz. It supports a junction temperature up to 150 °C and offers a complementary match with the 2SC4881 NPN transistor.
Verify component authenticity against official Toshiba Semiconductor and Storage documentation before integration. Confirm that the specific ordering suffix matches the required lead-free finish or packaging variant. Ensure design parameters remain within absolute maximum ratings to maintain reliability standards.
Select this component for designs requiring robust high-current switching performance in a through-hole format. Consider its complementary relationship with the 2SC4881 for push-pull configurations. Evaluate thermal management requirements given the 2 W power dissipation limit at 25°C case temperature.
This part belongs to the Toshiba high-current switching transistor series utilizing PCT process technology. It serves as a general-purpose discrete semiconductor device suitable for industrial and consumer electronics where reliable high-current control is necessary.
The datasheet identifies the 2SC4881 as the complementary counterpart. No direct single-part replacements are listed; verify pinout and electrical compatibility if substituting with other high-current PNP transistors.
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