Single Bipolar Transistors 2SA1931,Q(J product image

2SA1931,Q(J

  • Description:TRANS PNP 50V 5A TO-220NIS
  • Series:-

SKU:b66c4b19fda4 Category: Brand:

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2SA1931,Q(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 5A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1931,Q(J

  • Description:TRANS PNP 50V 5A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1A, 1V
  • Power - Max:2 W
  • Frequency - Transition:60MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1931,Q(J

2SA1931,Q(J

Single Bipolar Transistors Overview

The Toshiba 2SA1931 is a high-current PNP silicon epitaxial transistor designed for switching applications. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 50 V, housed in a TO-220NIS through-hole package. The device exhibits a low saturation voltage of 0.4 V maximum at 2 A and a transition frequency of 60 MHz. It supports a junction temperature up to 150 °C and offers a complementary match with the 2SC4881 NPN transistor.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient power handling
  • High-speed switching capability with typical storage time of 1.0 μs
  • Complementary pairing with the 2SC4881 NPN transistor

Single Bipolar Transistors Applications

  • High-current switching circuits
  • General-purpose amplification
  • Power supply regulation

Single Bipolar Transistors Procurement Notes

Verify component authenticity against official Toshiba Semiconductor and Storage documentation before integration. Confirm that the specific ordering suffix matches the required lead-free finish or packaging variant. Ensure design parameters remain within absolute maximum ratings to maintain reliability standards.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust high-current switching performance in a through-hole format. Consider its complementary relationship with the 2SC4881 for push-pull configurations. Evaluate thermal management requirements given the 2 W power dissipation limit at 25°C case temperature.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba high-current switching transistor series utilizing PCT process technology. It serves as a general-purpose discrete semiconductor device suitable for industrial and consumer electronics where reliable high-current control is necessary.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SC4881 as the complementary counterpart. No direct single-part replacements are listed; verify pinout and electrical compatibility if substituting with other high-current PNP transistors.

2SA1931,Q(J2SA1931,Q(J

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