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2SA1931,SINFQ(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 50V 5A TO-220NIS. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SA1931,SINFQ(J
- Description：TRANS PNP 50V 5A TO-220NIS
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：5:00 AM
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 200mA, 2A
- Current - Collector Cutoff (Max)：1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1A, 1V
- Power - Max：2 W
- Frequency - Transition：60MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220NIS
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SA1931,SINFQ(J
Single Bipolar Transistors Overview
The Toshiba 2SA1931 is a silicon PNP epitaxial planar transistor manufactured using the PCT process. It features a maximum collector-emitter voltage of -50 V and a continuous collector current rating of -5 A. The device provides a transition frequency of 60 MHz and a typical storage time of 1.0 μs, making it suitable for high-speed switching applications. It dissipates up to 2 W at 25°C case temperature and operates within a junction temperature range up to 150°C.
Single Bipolar Transistors Feature Summary
- Low saturation voltage capability
- High-speed switching performance
- Complementary pairing with 2SC4881
Single Bipolar Transistors Applications
- High-current switching circuits
- General-purpose amplifiers
- Power supply regulation
Single Bipolar Transistors Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision dates match design requirements. Ensure proper handling procedures are followed during assembly to prevent electrostatic discharge damage. Review reliability guidelines before finalizing system designs.
Single Bipolar Transistors Selection Notes
Evaluate thermal management requirements based on power dissipation limits. Consider complementary NPN transistor availability for push-pull configurations. Assess operating frequency constraints against the specified transition frequency. Verify package compatibility with existing PCB layouts and mounting hardware.
Single Bipolar Transistors Part Context
This component belongs to Toshiba's general-purpose bipolar transistor lineup designed for robust switching and amplification tasks. The PCT process ensures stable electrical characteristics across varying temperatures. It serves as a standard replacement in legacy designs requiring reliable PNP switching capabilities.
Single Bipolar Transistors Replacement Considerations
The 2SC4881 is documented as the complementary NPN counterpart. Verify pinout compatibility and thermal resistance values when substituting similar devices from other manufacturers.
Single Bipolar Transistors FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is -50 V.
Is this transistor suitable for audio amplification?
Yes, it can be used in audio amplifier applications due to its high current handling and low saturation voltage.
What is the typical storage time for switching operations?
The typical storage time (tstg) is 1.0 μs under specified test conditions.
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