2SA1939

Single Bipolar Transistors Overview

The EVVO 2SA1939 is a PNP silicon power transistor housed in a TO-3PS through-hole package. It features an 80V collector-emitter voltage rating and supports a continuous collector current of 6A. The device has a maximum power dissipation of 60W and a transition frequency of 30MHz. Key electrical characteristics include a collector saturation voltage of -2.0V at 5A and a junction temperature range up to 150°C.

Single Bipolar Transistors Feature Summary

• Designed for high-fidelity audio amplifier output stages
• Complements the 2SC5196 NPN transistor
• Features low collector saturation voltage

Single Bipolar Transistors Applications

• High-fidelity audio frequency amplifier output stage
• Power supply circuits

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation EVVO against standard Toshiba specifications, as this part number is historically associated with Toshiba Semiconductor. Confirm that the TO-3PS package and pinout match your circuit requirements. Ensure the component meets the specific thermal and electrical ratings required for your application before integration.

Single Bipolar Transistors Selection Notes

Select this PNP transistor when a complementary pair to the 2SC5196 is required for push-pull configurations. Consider its 60W power handling and 6A current capacity for medium-power audio applications. Verify compatibility with the intended heat sink and mounting hardware due to the TO-3PS form factor.

Single Bipolar Transistors Part Context

This component belongs to the class of single bipolar junction transistors (BJT). It serves as a power switching and amplification device within electronic circuits. The TO-3PS package provides robust mechanical stability and thermal performance suitable for high-power density applications.

Single Bipolar Transistors Replacement Considerations

The 2SC5196 is documented as a complementary NPN type. Direct substitutes may require verification of matching hFE linearity and saturation characteristics to ensure balanced performance in push-pull amplifier designs.