2SA1941-O(Q)

Single Bipolar Transistors Overview

The 2SA1941-O(Q) is a PNP silicon epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for high-power switching applications, featuring a TO-3PN through-hole package. Key electrical parameters include a collector-emitter breakdown voltage of 140 V, a maximum continuous collector current of 10 A, and a total power dissipation rating of 100 W. The device operates within a junction temperature range of -55 °C to 150 °C and has a transition frequency of 30 MHz.

Single Bipolar Transistors Feature Summary

• High power handling capability with 100 W dissipation rating
• Robust current handling up to 10 A collector current
• Suitable for high-voltage switching environments

Single Bipolar Transistors Applications

• Power amplifier circuits
• High-voltage switching regulators
• Industrial motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation against official Toshiba documentation to confirm exact binning or testing criteria. Ensure the procurement channel provides authentic components from authorized distributors to avoid counterfeit devices. Confirm RoHS compliance status if required for specific manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current capacity and moderate voltage ratings in a robust metal case package. Consider thermal management requirements due to the 100 W power dissipation rating. Evaluate the TO-3PN footprint compatibility with existing chassis mounting constraints.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of PNP power transistors. These components are widely utilized in audio power amplification and general-purpose high-power switching applications. The TO-3PN package provides excellent thermal performance and mechanical stability for industrial use cases.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements may differ in hFE binning or thermal resistance characteristics.