2SA1943-O(Q)

$3.32

Description：TRANS PNP 230V 15A TO-3P
Series：-

SKU:3a3f2b4ec26a Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA1943-O(Q) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 230V 15A TO-3P. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1943-O(Q)

Description：TRANS PNP 230V 15A TO-3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tray
Transistor Type：PNP
Current - Collector (Ic) (Max)：15 A
Voltage - Collector Emitter Breakdown (Max)：230 V
Vce Saturation (Max) @ Ib, Ic：3V @ 800mA, 8A
Current - Collector Cutoff (Max)：5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 1A, 5V
Power - Max：150 W
Frequency - Transition：30MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3PL
Supplier Device Package：TO-3P(L)
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1943-O(Q)

2SA1943-O(Q)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1943-O(Q) is a silicon PNP power transistor housed in a TO-3PL through-hole package. It features a collector-emitter voltage of -230 V, a maximum collector current of -7 A, and a power dissipation of 180 W at 25°C case temperature. The device has a transition frequency of 28 MHz and a DC current gain ranging from 70 to 140 at -5 A collector current.

Single Bipolar Transistors Feature Summary

Designed as a complementary pair to the 2SC5200 NPN transistor for audio applications
High collector-emitter breakdown voltage capability up to 230 V
Suitable for high-fidelity audio frequency amplifier output stages

Single Bipolar Transistors Applications

Power amplifier applications
Complementary pairing with 2SC5200
100-W high-fidelity audio frequency amplifier output stage

Single Bipolar Transistors Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct package and packing configuration. Confirm that the component meets the required absolute maximum ratings for your specific operating conditions, particularly regarding thermal management and continuous load stability.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage PNP transistor is required to complement an NPN device like the 2SC5200. Ensure the application design accounts for the 180 W power dissipation limit at a 25°C case temperature and provides adequate heat sinking to maintain junction temperatures within the specified 150°C maximum.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of silicon PNP transistors manufactured by Toshiba Semiconductor and Storage. It is specifically engineered for general-purpose power amplification tasks, offering robust performance characteristics suitable for demanding audio output stages where high voltage handling and current capacity are essential.