2SA1943N(S1,E,S)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1943N(S1,E,S) is a silicon PNP triple-diffused bipolar junction transistor designed for power amplifier applications. It features a collector-emitter breakdown voltage of -230 V (min), a continuous collector current rating of -15 A, and a maximum collector power dissipation of 150 W at 25°C case temperature. The device exhibits a transition frequency of 30 MHz typical and a DC current gain ranging from 80 to 160. Packaged in the TO-3P(N) format with a junction-to-case thermal resistance of 0.83 °C/W, it operates within a junction temperature range up to 150°C.

Single Bipolar Transistors Feature Summary

• High collector voltage capability rated at -230 V minimum
• Complementary pairing with the 2SC5200N NPN transistor
• Triple-diffused silicon construction for robust performance

Single Bipolar Transistors Applications

• Power amplifiers
• 100-W high-fidelity audio frequency amplifier output stages

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance details are not explicitly defined in the standard datasheet text. Confirm that the specific ordering suffix corresponds to the required packaging configuration. Ensure all design parameters remain strictly within the absolute maximum ratings to maintain product reliability under continuous heavy loads.

Single Bipolar Transistors Selection Notes

Select this component when designing high-voltage audio output stages requiring a PNP transistor paired with the 2SC5200N. The TO-3P(N) package necessitates appropriate heatsinking due to the 150 W power dissipation rating. Designers must account for the 0.83 °C/W thermal resistance to ensure the junction temperature does not exceed 150°C during operation.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of silicon PNP transistors manufactured by Toshiba Semiconductor and Storage. Commercial production began in August 2012. The device utilizes a triple-diffused process technology and is housed in the TO-3P(N) package, which connects the collector to the heatsink for efficient thermal management in high-power electronic circuits.

Single Bipolar Transistors Replacement Considerations

The official complementary counterpart is the 2SC5200N. For direct replacement verification, consult the Toshiba Semiconductor Reliability Handbook and individual reliability data sheets to ensure suitability for the specific application environment.

Single Bipolar Transistors FAQ

What is the recommended complementary transistor for the 2SA1943N?

The 2SA1943N is officially documented as complementary to the 2SC5200N.

How is the collector terminal connected in the TO-3P(N) package?

In the TO-3P(N) package, Pin 2 serves as the Collector and is electrically connected to the metal heatsink flange.

What is the maximum allowable junction temperature for this device?

The maximum junction temperature (Tj) is limited to 150°C.