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2SA1954BTE85LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 12V 0.5A SC-70. Review the specifications below when checking this part for your BOM.
The 2SA1954BTE85LF is a PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector-emitter voltage of 12 V and a continuous collector current rating of 500 mA. The device operates with a transition frequency of 130 MHz and has a maximum power dissipation of 100 mW. It is housed in an SC-70 (SOT-323) surface-mount package. The component exhibits a DC current gain of at least 50 when tested at 10 mA and 2 V, with a collector cutoff current of 100 nA. It supports a maximum junction temperature of 125°C.
Verify the obsolete status of this component before design finalization. Confirm availability through authorized distributors or approved substitute manufacturers. Ensure that any replacement part meets the original electrical specifications and package dimensions to maintain circuit integrity and compliance.
Select this component for low-power, high-frequency switching tasks where minimal footprint is critical. Evaluate thermal constraints due to the 100 mW power limit. Consider alternative active components if higher current handling or voltage ratings are required for the specific application environment.
This transistor belongs to the 2SA1954 series from Toshiba Semiconductor and Storage. It is designed for use in consumer electronics and portable equipment. The SC-70 package allows for automated surface-mount assembly, supporting high-volume manufacturing processes common in modern electronic device production.
Public confirmed substitutes include Rohm Semiconductor 2SB1689T106 and Diodes Incorporated ZXTP07012EFFTA.
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