2SA1955FVBTPL3Z

Single Bipolar Transistors Overview

The Toshiba 2SA1955FV is a silicon PNP epitaxial transistor designed for general-purpose amplifier and switching applications. It features a low saturation voltage of −15 mV (typical) at IC = −10 mA and IB = −0.5 mA, alongside a large collector current capability of −400 mA maximum. The device operates with a collector-emitter voltage of −12 V and a collector-base voltage of −15 V. Electrical characteristics include a DC current gain (hFE) ranging from 300 to 1000, a transition frequency (fT) of up to 130 MHz, and a collector power dissipation of 150 mW when mounted on an FR4 board.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient signal amplification
• High DC current gain suitable for general-purpose applications
• Fast switching speed with defined transition frequency

Single Bipolar Transistors Applications

• General purpose amplifier circuits
• Switching applications
• Muting switch applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm RoHS compliance status directly with the manufacturer or authorized distributor as environmental declarations may vary by production batch. Ensure the component meets the absolute maximum ratings for your specific operating temperature and load conditions before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high DC current gain and low saturation voltage in small-signal applications. Consider the 150 mW power dissipation limit and ensure adequate thermal management on the PCB substrate. Verify that the −12 V collector-emitter voltage rating aligns with the circuit's supply requirements.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of PNP bipolar junction transistors manufactured using the PCT process. These devices are engineered for use in consumer electronics, office equipment, and measuring instruments where reliable small-signal performance is required.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.