2SA1962-O(Q)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1962-O(Q) is a silicon PNP triple diffused power transistor designed for high-voltage, high-current applications. It features a minimum collector-emitter breakdown voltage of −230 V and supports a continuous collector current of −15 A with a maximum power dissipation of 130 W at 25°C case temperature. The device exhibits a transition frequency of 30 MHz and a DC current gain ranging from 35 to 160 depending on the operating point. It utilizes a TO-3PL (JEDEC 2-16C1A) package and serves as the complementary counterpart to the 2SC5242 NPN transistor.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon PNP construction optimized for robust power amplifier performance
• High breakdown voltage capability rated at a minimum of −230 V
• Designed specifically as a complementary pair to the 2SC5242 transistor
• Suitable for high-fidelity audio frequency amplifier output stages

Single Bipolar Transistors Applications

• 80-W high-fidelity audio frequency amplifier output stage
• General-purpose power amplifier circuits
• Complementary push-pull power amplifier configurations

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility or lead-free composition. Confirm that the ordering code matches the exact electrical classification required for your design parameters. Always consult the latest Toshiba Semiconductor Reliability Handbook for derating concepts and handling precautions before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when designing power amplifiers requiring a high-voltage PNP transistor paired with an NPN equivalent like the 2SC5242. Ensure the thermal management system can maintain the case temperature at or below 25°C to achieve the full 130 W power dissipation rating. Evaluate the safe operating area curves to guarantee reliable operation under varying load conditions and temperature extremes.

Single Bipolar Transistors Part Context

This part belongs to the family of high-power bipolar junction transistors manufactured by Toshiba Semiconductor and Storage. It is engineered using a triple diffused process to enhance reliability and switching characteristics in demanding analog applications. The component is widely recognized in the electronics industry for its use in high-end audio equipment and industrial power supply designs.

Single Bipolar Transistors Replacement Considerations

The 2SC5242 is the officially documented complementary NPN transistor for this component. Other variants within the same series include the 2SA1943 and FJA4313.