2SA1972,T6WNLF(J

Single Bipolar Transistors Overview

The Toshiba 2SA1972 is a silicon PNP triple diffused transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of −400 V and a DC collector current rating of −0.5 A. The device operates with a maximum power dissipation of 900 mW at 25°C ambient temperature. Electrical characteristics include a typical transition frequency of 35 MHz, a collector cut-off current of −10 μA, and a saturation voltage of −1.0 V maximum under specified test conditions.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon PNP construction optimized for high-voltage performance
• Capable of handling up to −400 V collector-emitter breakdown voltage
• Suitable for general electronics applications including computers and measuring equipment

Single Bipolar Transistors Applications

• High-voltage switching circuits
• General purpose electronics in computers and personal equipment
• Industrial robots and home electronics appliances
• Measuring equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the package type matches the JEDEC TO-92MOD standard. Review the manufacturer's reliability handbook for derating concepts before finalizing design parameters. Ensure the component is not utilized in unintended applications requiring extraordinary reliability levels.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage PNP transistor is required for switching tasks. The −400 V breakdown voltage supports demanding circuit topologies. Verify that the thermal management strategy accommodates the 900 mW power dissipation limit. Ensure the operating junction temperature remains within the specified range to maintain electrical stability and prevent premature failure during continuous operation.

Single Bipolar Transistors Part Context

This component belongs to the category of discrete bipolar transistors manufactured by Toshiba Semiconductor and Storage. It utilizes a triple diffused process to achieve its high-voltage capabilities. The device is packaged in a JEITA-compatible format suitable for through-hole mounting. It serves as a standalone switching element rather than an integrated circuit or logic gate.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.