2SA1978-T1B-A

Overview

The CEL 2SA1978-T1B-A is a PNP silicon bipolar transistor designed for RF applications. It operates with a maximum collector-emitter voltage of -12V and a maximum collector current of -50mA. The device features a typical transition frequency (fT) of 5.5 GHz at 1 GHz test conditions, providing a minimum DC current gain (hFE) of 40. Packaged in the compact SOT-23 format, it serves as a discrete component for high-frequency signal processing circuits.

Feature Summary

• High-speed switching capability suitable for RF environments
• Compact surface-mount footprint for space-constrained designs
• Optimized for low-noise amplification stages

Applications

• RF front-end modules
• Low noise amplifier stages
• High-frequency switching circuits

Procurement Notes

Verify the specific suffix T1B-A against official manufacturer documentation to confirm tape-and-reel specifications and binning requirements. Ensure compatibility with standard SOT-23 handling protocols during assembly.

Selection Notes

Select this component when a PNP configuration is required for frequencies up to 5.5 GHz. Compare hFE stability and noise figure requirements against alternative JEITA equivalents like the NE97733 if different gain characteristics are needed.

Part Context

This part belongs to the Silicon Bipolar Transistors category within the CEL portfolio. It is functionally equivalent to the JEITA standard part number 2SC5454, facilitating cross-reference searches in design databases.

Replacement Considerations

The NE97733 is listed as a JEITA equivalent. Verify pinout and electrical tolerances before substitution.