Single Bipolar Transistors 2SA1980-L-AP product image

2SA1980-L-AP

  • Description:TRANS PNP 50V 0.15A TO-92
  • Series:-

SKU:fd1b1c0736e3 Category: Brand:

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2SA1980-L-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS PNP 50V 0.15A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1980-L-AP

  • Description:TRANS PNP 50V 0.15A TO-92
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 2A, 6V
  • Power - Max:625 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1980-L-AP

2SA1980-L-AP

Single Bipolar Transistors Overview

The 2SA1980-L-AP is a PNP silicon transistor manufactured by Micro Commercial Components (MCC). It features a collector-emitter voltage of 50 V and a collector current rating of 150 mA. The device offers a low collector saturation voltage of 0.3 V maximum and a typical output capacitance of 4.0 pF. The 'L' suffix indicates a forward current transfer ratio (hFE) rank of 300 to 700 at IC=2.0 Adc, VCE=6.0Vdc. It operates with a junction temperature up to 150°C and is housed in a TO-92 package.

Single Bipolar Transistors Feature Summary

  • Low collector saturation voltage for efficient switching
  • Low output capacitance for high-frequency performance
  • Complementary pairing available with the 2SC5343 NPN transistor

Single Bipolar Transistors Applications

  • High-fidelity audio amplifiers
  • Power supply circuits
  • General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '-AP' corresponds to the Ammo Packing configuration containing 20,000 pieces per carton. Confirm that the 'L' designation matches the required hFE gain range of 300 to 700. Ensure compliance with RoHS standards as indicated by the manufacturer's documentation. Check for authorized distributor status to guarantee genuine parts and traceability.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain PNP transistor is required for audio or power applications. The 'L' grade provides a minimum hFE of 300, suitable for precise amplification stages. Consider the complementary 2SC5343 for matched pair requirements. Verify that the TO-92 package fits the thermal and spatial constraints of the target design.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1980 series of PNP silicon transistors produced by MCC. The series includes variants with different hFE ranks (O, Y, G, L) to accommodate various circuit gain requirements. The 2SA1980 is designed as a complement to the 2SC5343 NPN transistor, facilitating balanced push-pull configurations in amplifier designs.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other 2SA1980 variants with matching electrical characteristics but different hFE ranks (e.g., 2SA1980-O, -Y, -G), provided the circuit gain tolerances allow for the variation. Ensure any replacement maintains the TO-92 package and 50V/150mA ratings.

2SA1980-L-AP2SA1980-L-AP

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