Single Bipolar Transistors 2SA2007E product image

2SA2007E

$2.54
  • Description:TRANS PNP 60V 12A TO-220FN
  • Series:-

SKU:e5cefec45226 Category: Brand:

  
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2SA2007E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 60V 12A TO-220FN. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA2007E

  • Description:TRANS PNP 60V 12A TO-220FN
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):12:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 400mA, 8A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:320 @ 2A, 2V
  • Power - Max:25 W
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220FN
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA2007E

2SA2007E

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SA2007 is a high-speed switching PNP transistor housed in a TO-220FN package. It features a collector-emitter voltage of -60V and a continuous collector current rating of -12A, with a power dissipation capacity of 2W at 25°C case temperature. The device exhibits a typical fall time of 0.15µs at -6A collector current and a low saturation voltage of -0.2V under specified drive conditions. It provides a wide safe operating area (SOA) and complements the 2SC5526 NPN counterpart.

Single Bipolar Transistors Feature Summary

  • High-speed switching capability with a typical fall time of 0.15µs
  • Low saturation voltage for efficient conduction
  • Wide safe operating area (SOA) for robust performance

Single Bipolar Transistors Applications

  • High-speed switching circuits
  • Complementary pairs with 2SC5526
  • Power supply switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin code required for your application, as gain ranges from 50 to 500 depending on the suffix. Confirm the TO-220FN lead configuration matches your PCB footprint. Ensure thermal management supports the 2W dissipation limit at ambient temperatures above 25°C. Check for RoHS compliance status on the latest datasheet revision before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with fast turn-off characteristics is needed. It serves as the direct complementary match to the 2SC5526 NPN transistor. Consider the TO-220FN package for through-hole mounting and heat sinking requirements. Evaluate the hFE grade necessary for your specific gain requirements, as multiple grades are available.

Single Bipolar Transistors Part Context

This part belongs to ROHM's general-purpose high-speed switching transistor lineup. It is designed for applications requiring rapid switching transitions and moderate power handling. The TO-220FN package allows for effective thermal dissipation compared to smaller surface-mount alternatives, making it suitable for board-level power control tasks.

Single Bipolar Transistors Replacement Considerations

The 2SC5526 is its complementary NPN counterpart. Verify pinout compatibility if substituting with other TO-220 PNP transistors. Ensure replacement parts meet the -60V VCEO and -12A IC ratings.

Single Bipolar Transistors FAQ

What is the typical fall time of the 2SA2007?

The typical fall time is 0.15µs when tested at a collector current of -6A.

Does the 2SA2007 complement another specific transistor?

Yes, it is designed to complement the 2SC5526 NPN transistor.

What is the maximum collector current rating?

The absolute maximum continuous collector current is -12A.

2SA2007E2SA2007E
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