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2SA2018E3HZGTL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 12V 0.5A EMT3. Review the specifications below when checking this part for your BOM.
The 2SA2018E3HZGTL is a PNP bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage of -12 V and a continuous collector current of 500 mA. The device has a power dissipation rating of 150 mW and a gain bandwidth product (fT) of 260 MHz. It is housed in an EMT3 (SOT-416) surface-mount package with dimensions of 1.6x1.6 mm.
Verify the specific suffix 'E3HZGTL' to ensure correct packaging and tape-and-reel configuration. Confirm that the -12V rating aligns with circuit requirements, as other variants may offer higher voltage ratings. Check RoHS compliance status if required by project specifications.
Select this component when a small-signal PNP transistor with moderate current handling (500mA) and high-speed characteristics (260MHz fT) is needed. Consider the complementary NPN counterpart for push-pull or differential amplifier designs requiring matched performance characteristics in a minimal footprint.
This part belongs to ROHM's lineup of general-purpose bipolar transistors designed for consumer electronics and automotive applications. The EMT3 package allows for automated assembly in space-constrained PCB layouts. It serves as a standard replacement for legacy SOT-416 components in modern designs.
Direct substitutes include other PNP transistors in SOT-416 packages with similar voltage and current ratings. Verify pin compatibility and thermal characteristics before swapping. Complementary NPN types like the 2SC series may be required for complete circuit functionality.
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