2SA2029M3T5G

Single Bipolar Transistors Overview

The onsemi 2SA2029M3T5G is a PNP silicon general-purpose amplifier transistor housed in the SOT-723 surface-mount package. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 Vdc. The device offers a DC current gain (hFE) range of 120 to 560, with a typical transition frequency of 140 MHz at 30 MHz test conditions. Power dissipation is rated at 265 mW, supporting junction temperatures up to 150°C. The component is lead-free and available in tape and reel packaging.

Single Bipolar Transistors Feature Summary

• Designed for low-power surface mount applications where board space is limited
• Provides high DC current gain ranging from 120 to 560
• Ensures low collector-emitter saturation voltage below 0.5 V
• Includes robust ESD protection meeting Human Body Model and Machine Model standards

Single Bipolar Transistors Applications

• General purpose amplifier circuits
• Low power surface mount designs
• Automotive applications requiring AEC-Q101 qualification

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm package type and packaging quantity. Confirm that the NSV prefix is required if automotive site control or PPAP capability is necessary for the application. Ensure the selected variant matches the required Pb-Free status and tape and reel specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for designs prioritizing compact footprint via the SOT-723 package. Consider the 100 mA continuous collector current limit and 265 mW power dissipation rating for thermal management. Verify that the 50 V collector-emitter voltage meets circuit requirements. Check if AEC-Q101 qualification is mandatory for the target environment.

Single Bipolar Transistors Part Context

This part belongs to the 2SA2029M3 series of PNP silicon transistors manufactured by onsemi. It is specifically engineered as a general-purpose amplifier transistor. The device utilizes silicon technology and is packaged in the SOT-723 form factor, designated as CASE 631AA, which is optimized for automated surface mount assembly processes.

Single Bipolar Transistors Replacement Considerations

The NSV2SA2029M3T5G is an alternative version of this component. It shares the same electrical characteristics but includes the NSV prefix to denote specific automotive site requirements and PPAP capability. Verify if the standard 2SA2029M3T5G suffices or if the NSV variant's unique site controls are required.