2SA2070(TE12L,F)

Single Bipolar Transistors Overview

The Toshiba 2SA2070 is a silicon PNP epitaxial planar transistor designed for high-speed switching applications. It features a DC current gain (hFE) ranging from 200 to 500 at an IC of -0.1 A, and a low collector-emitter saturation voltage of -0.20 V maximum at -0.3 A. The device exhibits a typical fall time of 70 ns. Absolute maximum ratings include a collector-base voltage of -50 V, a collector-emitter voltage of -50 V, and a continuous collector current of -1.0 A. Power dissipation reaches 1.0 W under standard conditions.

Single Bipolar Transistors Feature Summary

• High DC current gain with values between 200 and 500
• Low collector-emitter saturation voltage for efficient conduction
• Fast switching performance with a typical fall time of 70 ns

Single Bipolar Transistors Applications

• High-speed switching circuits
• DC-DC converter designs
• Power supply regulation modules

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm environmental compliance status. Confirm that the package type matches the required SC-62-3 footprint. Ensure the component meets the intended thermal dissipation requirements based on the FR4 board mounting specifications provided in the datasheet.

Single Bipolar Transistors Selection Notes

Select this component when circuit design requires a PNP transistor with high current gain and rapid turn-off characteristics. Evaluate the absolute maximum ratings to ensure operation remains within the specified voltage and current limits. Consider the thermal resistance characteristics and safe operating area curves for proper heat management during continuous or pulsed operation.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of silicon PNP epitaxial transistors. These components are engineered for general-purpose switching and amplification tasks. The 2SA2070 specifically targets applications demanding fast response times and stable current amplification in compact surface-mount packages.

Single Bipolar Transistors Replacement Considerations

Consult the official Toshiba replacement guide for verified cross-reference part numbers. Do not substitute with generic equivalents without verifying pinout compatibility and electrical parameter alignment.

Single Bipolar Transistors FAQ

What is the typical fall time for the 2SA2070?

The typical fall time is 70 ns under standard test conditions.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at -50 V.

How does the DC current gain vary with collector current?

The hFE ranges from 200 to 500 at -0.1 A and drops to a minimum of 125 at -0.3 A.