2SA2094TLQ

Single Bipolar Transistors Overview

The ROHM 2SA2094TLQ is a PNP middle power transistor housed in the TSMT3 surface-mount package. It supports a collector current of -2.0 A and a collector-emitter voltage of -60 V, with a maximum power dissipation of 0.5 W at 25°C. The device features a low saturation voltage of -0.50 V (max) under an IC/IB ratio of -1A/-0.1A. DC current gain (hFE) ranges from 120 to 270, and the transition frequency reaches up to 300 MHz.

Single Bipolar Transistors Feature Summary

• Designed for middle power driver applications
• Offers low collector-emitter saturation voltage
• Complementary to the 2SC5866 NPN type

Single Bipolar Transistors Applications

• Motor drivers
• LED drivers
• Power supplies

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm packaging details and RoHS compliance status. Ensure that the procurement channel provides traceable documentation matching the manufacturer's specifications. Confirm availability through authorized distributors as standard supply channels may vary.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high-speed switching and moderate power handling capabilities. Verify that the thermal management design accommodates the 0.5 W power dissipation limit. Ensure the base drive circuitry can provide sufficient current to maintain the desired saturation levels during operation.

Single Bipolar Transistors Part Context

This part belongs to ROHM's lineup of general-purpose bipolar junction transistors designed for surface-mount assembly. The TSMT3 package allows for compact board layouts while maintaining reliable electrical performance for consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

The 2SC5866 serves as the complementary NPN counterpart within the same product family. Direct pin-compatible replacements should be verified against the official datasheet before implementation.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is -60 V.

Is this transistor suitable for high-frequency applications?

Yes, it has a transition frequency (fT) of up to 300 MHz, making it suitable for high-speed switching.

What is the recommended operating temperature range?

The storage temperature range is -55°C to +150°C, and the junction temperature must not exceed 150°C.