2SA2099

Single Bipolar Transistors Overview

The onsemi 2SA2099 is a PNP Epitaxial Planar Silicon Transistor designed for high-current switching applications. It features an MBIT process, delivering high current capacitance and low collector-to-emitter saturation voltage. Key electrical parameters include a maximum collector current of 10 A and a collector-to-emitter breakdown voltage of 50 V. The device exhibits a DC current gain (hFE) ranging from 200 to 700 at 1 A, with a transition frequency (fT) up to 200 MHz. Absolute maximum ratings specify a collector dissipation of 2 W at 25°C case temperature and a junction temperature limit of 150°C.

Single Bipolar Transistors Feature Summary

• Adoption of MBIT process technology
• High-speed switching capability
• Low collector-to-emitter saturation voltage

Single Bipolar Transistors Applications

• Relay drivers
• Lamp drivers
• Motor drivers

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as the datasheet originates from SANYO Semiconductor Co.,Ltd., which was acquired by onsemi. Confirm that the specific part number matches the required PNP configuration and TO-220ML package type. Ensure compliance with standard application guidelines, as these components are not intended for special applications requiring extremely high reliability or safety-critical functions without prior consultation.

Single Bipolar Transistors Selection Notes

Select this component for general electronics equipment such as home appliances, AV equipment, communication devices, office equipment, and industrial equipment. Consider the 10 A continuous collector current and 50 V breakdown voltage limits when designing circuits. Evaluate thermal management requirements based on the 2 W power dissipation rating at 25°C case temperature and the 150°C maximum junction temperature specification.

Single Bipolar Transistors Part Context

The 2SA2099 is a PNP transistor paired with the NPN 2SC5888 in the same datasheet. Both devices share similar structural characteristics and are manufactured using the MBIT process. They are housed in the TO-220ML package, providing a compact solution for high-current switching tasks. The pair is suitable for complementary push-pull configurations in driver circuits.

Single Bipolar Transistors Replacement Considerations

The 2SC5888 is the complementary NPN counterpart listed in the same datasheet. No other direct substitute part numbers are confirmed in the provided documentation.

Single Bipolar Transistors FAQ

What is the maximum collector current for the 2SA2099?

The maximum continuous collector current is 10 A, with a pulse current rating of 13 A.

What is the typical DC current gain range?

The DC current gain (hFE) ranges from a minimum of 200 to a maximum of 700 when measured at a collector current of 1 A and VCE of -2 V.

Is this component suitable for medical or aerospace applications?

No, the product is intended for general electronics equipment and is not designed for special applications like medical equipment or aerospace instruments that require extremely high reliability.