2SA2124-TD-E

Single Bipolar Transistors Overview

The onsemi 2SA2124-TD-E is a PNP bipolar junction transistor (BJT) designed for surface-mount applications in the PCP package. It features a maximum collector current of 2 A and an emitter-collector breakdown voltage of 30 V. The device offers a transition frequency of 440 MHz and a maximum power dissipation of 3.5 W. Key electrical characteristics include a DC current gain (hFE) minimum of 200 at 100 mA, a saturation voltage of 400 mV at 75 mA base and 1.5 A collector current, and a collector cutoff current of 100 nA. The component supports a junction temperature up to 150°C.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a 440 MHz transition frequency
• Robust thermal performance supporting a 150°C junction temperature
• Low saturation voltage for efficient power handling

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Power management modules
• Audio amplifier output stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix and manufacturer part number against official onsemi documentation to ensure compatibility. Confirm the component status, as availability may vary by region or production cycle. Cross-reference datasheet parameters with system requirements before integration. Ensure proper handling procedures are followed during assembly to maintain device integrity.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP transistor with moderate current handling and high-frequency response. Evaluate the 30 V breakdown voltage against circuit supply rails. Consider the PCP package constraints for thermal management and PCB layout. Compare hFE and saturation voltage specifications against alternative devices to ensure optimal efficiency in the target application.

Single Bipolar Transistors Part Context

This component belongs to the discrete semiconductor category, specifically within the single bipolar junction transistor family. It is manufactured by onsemi and utilizes silicon technology. The device is intended for surface-mount assembly, providing a compact solution for modern electronic designs requiring reliable switching and amplification functions in a standardized package format.

Single Bipolar Transistors Replacement Considerations

Consult official onsemi substitution guides for verified alternatives. Ensure any replacement matches the PNP configuration, 30 V rating, and 2 A current capacity. Verify package compatibility and thermal characteristics to maintain system performance without redesign.