2SA2126-H

Single Bipolar Transistors Overview

The onsemi 2SA2126-H is a discontinued PNP bipolar junction transistor (BJT) designed for high-speed switching applications. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 3 A. The device utilizes MBIT process technology to achieve low saturation voltage and high current gain, with a minimum hFE of 200 at 100 mA and 2 V. Key electrical parameters include a transition frequency of 390 MHz, a power dissipation capacity of 800 mW, and a collector cutoff current of 1 µA. The component is housed in a TP (TO-251AA/IPAK) through-hole package.

Single Bipolar Transistors Feature Summary

• Adopts MBIT process technology for enhanced performance
• Provides low collector-to-emitter saturation voltage
• Supports high-speed switching operations

Single Bipolar Transistors Applications

• DC/DC converter circuits
• Relay driver stages
• Lamp driver modules
• Motor driver interfaces

Single Bipolar Transistors Procurement Notes

Verify the obsolete status of this component before integration into new designs. Confirm that the recommended substitute NJD1718T4G meets all functional requirements. Review the Product Change Notification dated December 23, 2021, for manufacturing details. Ensure compliance with RoHS3 specifications if applicable to legacy systems.

Single Bipolar Transistors Selection Notes

This part is suitable for low-voltage, moderate-current switching tasks requiring fast response times. Designers should account for the 800 mW power limit and ensure adequate thermal management within the TP package. Consider the 50 V breakdown voltage when selecting components for higher voltage rails. Evaluate the availability of alternative sources due to end-of-life status.

Single Bipolar Transistors Part Context

The 2SA2126-H belongs to onsemi's lineup of single PNP bipolar transistors optimized for power switching. It shares architectural similarities with other devices in the series, such as the 2SC5706-TL-H and 2SD1803T, which also utilize MBIT processes for low saturation characteristics. These components are typically employed in compact power management solutions where efficiency and speed are critical.

Single Bipolar Transistors Replacement Considerations

The manufacturer recommends the NJD1718T4G as an alternative. Verify pinout compatibility and electrical parameter alignment during substitution planning.