2SA2126-S-TL-E

Single Bipolar Transistors Overview

The onsemi 2SA2126-S-TL-E is a PNP silicon epitaxial planar transistor designed for high-speed switching applications. It features a maximum collector-emitter voltage of -50V and a continuous collector current of -3A. The device utilizes MBIT process technology to achieve low collector-to-emitter saturation voltage and high current gain. Key electrical parameters include a DC current gain (hFE) minimum of 200, a transition frequency (fT) of 390 MHz, and a power dissipation rating of 800 mW. It operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Adopts MBIT process technology for enhanced performance
• Provides low collector-to-emitter saturation voltage
• Supports high-speed switching operations
• Delivers high current capacitance characteristics

Single Bipolar Transistors Applications

• DC/DC converter circuits
• Relay driver stages
• Lamp driver modules
• Motor driver interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'S-TL-E' against official onsemi documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and manufacturing origin details directly with authorized distributors or the manufacturer before procurement. Ensure the component matches the required lead frame material and moisture sensitivity level for your assembly process.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring a PNP switch with -50V blocking capability and -3A load handling. The low VCE(sat) makes it suitable for efficient power management in converters. Consider the 800 mW thermal limit and TO-252/DPAK package constraints for heat dissipation requirements in your PCB layout design.

Single Bipolar Transistors Part Context

This part belongs to the 2SA2126 series of bipolar transistors from onsemi. It is engineered as a general-purpose high-speed switching device. The series is characterized by its robust construction using epitaxial planar silicon technology, offering reliability in industrial and consumer electronic applications requiring precise current control.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Verify pinout compatibility and electrical ratings with any potential alternative components before implementation.