2SA2126-TL-E

Single Bipolar Transistors Overview

The onsemi 2SA2126-TL-E is a PNP silicon epitaxial planar transistor designed for high-speed switching applications. It features a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -3 A. The device utilizes MBIT process technology to achieve low collector-to-emitter saturation voltage and high current gain. Key electrical parameters include a transition frequency (fT) of 390 MHz, a DC current gain (hFE) minimum of 200 at IC=100mA, VCE=2V, and a maximum power dissipation (Pd) of 800 mW in a TO-251-3 (IPAK) surface-mount package.

Single Bipolar Transistors Feature Summary

• Adopts MBIT process technology for enhanced performance
• Features low collector-to-emitter saturation voltage for efficient switching
• Provides high current capacitance and high-speed switching capabilities

Single Bipolar Transistors Applications

• DC/DC converter circuits
• Relay driver stages
• Lamp driver modules
• Motor driver interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TL-E' against official onsemi documentation, as standard listings often reference '2SA2126-H' or '2SA2126-TL-H'. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability varies by region. Ensure the ordering part number matches the exact package and tape-and-reel specifications required for your assembly line.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a -50 V, -3 A PNP switch with low saturation voltage. The TO-251-3 package suits space-constrained PCB layouts. Verify thermal management requirements given the 800 mW power dissipation limit. Ensure the driving circuit can supply sufficient base current to maintain the specified low VCE(sat) during saturation.

Single Bipolar Transistors Part Context

The 2SA2126 series belongs to onsemi's lineup of bipolar junction transistors optimized for power switching. These devices are engineered to complement NPN counterparts in push-pull configurations. The family emphasizes low VCE(sat) and high hFE to improve efficiency in consumer electronics and industrial control systems where compact form factors are critical.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for the 2SA2126 series include NJD1718T4G from onsemi. Verify pinout compatibility and electrical parameter equivalence before substitution. Cross-reference datasheets to ensure the replacement meets the -50 V and -3 A requirements.