2SA2142(TE16L1,NQ)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA2142(TE16L1,NQ) is a silicon PNP triple diffused transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of -600 V and a continuous collector current rating of -0.5 A. The device dissipates up to 15 W at a case temperature of 25°C, with a maximum junction temperature of 150°C. Electrical characteristics include a DC current gain ranging from 70 to 500 at -1 mA collector current, and a transition frequency of 35 MHz at -50 mA.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon PNP construction
• High breakdown voltage capability
• Suitable for high-voltage switching applications

Single Bipolar Transistors Applications

• High-voltage switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm environmental compliance status. Confirm that the component meets all applicable RoHS directives before integration into final assemblies. Review the manufacturer's reliability handbook for derating concepts and methods to ensure long-term operational stability under intended load conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high collector-emitter voltage ratings combined with moderate current handling capabilities. Evaluate the safe operating area curves to ensure operation remains within thermal limits during both steady-state and transient conditions. Consider the transition frequency specifications if the application involves signal processing or high-speed switching requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of bipolar junction transistors manufactured by Toshiba Semiconductor and Storage. These components are engineered as discrete semiconductor devices utilizing silicon epitaxial processes. The product line focuses on providing reliable performance for various electronic circuit implementations requiring robust switching characteristics.

Single Bipolar Transistors Replacement Considerations

Consult official distributor databases for verified substitute part numbers. Ensure any replacement matches the original pinout configuration and electrical parameters.