2SA2154CT-GR,L3F

Single Bipolar Transistors Overview

The Toshiba 2SA2154CT-GR,L3F is a PNP silicon bipolar junction transistor designed for low-frequency amplification. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device operates with a gain-bandwidth product of 80 MHz and dissipates up to 100 mW of power. Packaged in the CST-3 surface-mount format, it provides a collector-emitter saturation voltage of 180 mV.

Single Bipolar Transistors Feature Summary

• Optimized for low-frequency amplification applications
• Integrated within a compact surface-mount package

Single Bipolar Transistors Applications

• Low-frequency signal amplification circuits

Single Bipolar Transistors Procurement Notes

Verify the complete part number including suffixes against official Toshiba Semiconductor and Storage documentation to ensure exact component matching. Confirm RoHS compliance status and specific packaging configurations directly with authorized distributors or the manufacturer before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring PNP switching or amplification with moderate current handling capabilities. Ensure the operating environment remains within the specified thermal limits and that the required voltage ratings align with the system's maximum supply constraints.

Single Bipolar Transistors Part Context

This component belongs to the broader category of discrete bipolar transistors manufactured by Toshiba Semiconductor and Storage. It serves as a fundamental active element in electronic circuitry, providing necessary gain and control functions within various consumer and industrial electronic devices.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference guides for verified substitute part numbers. Do not assume functional equivalence with generic PNP transistors without verifying pinout compatibility and electrical specifications.