2SA2154MFVGR,L3F

Single Bipolar Transistors Overview

The 2SA2154MFVGR,L3F is a PNP silicon epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for low-frequency amplification applications in consumer electronics. The device features a CST-3 surface-mount package with a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 V. Key electrical parameters include a collector-base voltage of 50 V, an emitter-base voltage of 5 V, and a power dissipation capacity of 100 mW. The component exhibits a gain-bandwidth product (fT) of 80 MHz and a collector-emitter saturation voltage of 180 mV at specified test conditions.

Single Bipolar Transistors Feature Summary

• Utilizes a CST-3 surface-mount package for compact circuit board integration
• Engineered specifically for low-frequency amplification tasks
• Constructed using silicon epitaxial planar technology

Single Bipolar Transistors Applications

• Low-frequency signal amplification circuits
• General-purpose switching applications within consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the exact part number against official Toshiba Semiconductor and Storage documentation to confirm specifications. Ensure compatibility with the intended application requirements regarding voltage ratings and current handling capabilities before procurement. Cross-reference datasheets for accurate thermal and electrical performance data.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 50 V collector-emitter voltage rating and 100 mA continuous current capability is required. The CST-3 package is suitable for space-constrained designs. Consider the 80 MHz gain-bandwidth product for appropriate frequency range limitations in amplification stages.

Single Bipolar Transistors Part Context

This component belongs to the 2SA series of PNP transistors produced by Toshiba Semiconductor and Storage. The series is characterized by its use in general-purpose amplification and switching roles within various electronic devices. The specific model variant indicates a particular packaging and configuration optimized for surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.