2SA2202-TD-E

Single Bipolar Transistors Overview

The 2SA2202-TD-E is a PNP single bipolar junction transistor manufactured by onsemi. It features a collector current rating of 2 A and a collector-emitter voltage of -100 V. The device utilizes FBET and MBIT processes to achieve low saturation voltage and high-speed switching capabilities. Key electrical parameters include a DC current gain (hFE) ranging from 200 to 400, a gain-bandwidth product of 300 MHz, and a maximum power dissipation of 3.5 W at 25°C case temperature. The component is housed in the PCP package (SC-62/SOT-89/TO-243) with a minimum packing quantity of 1,000 pieces per reel.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT manufacturing processes for enhanced performance
• Provides large current capacity suitable for demanding applications
• Features low collector-to-emitter saturation voltage for efficiency
• Supports high-speed switching operations

Single Bipolar Transistors Applications

• DC / DC converters
• Relay drivers
• Lamp drivers
• Motor drivers
• Flash circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TD-E to confirm the PCP package type and tape-and-reel shipping configuration. Ensure compatibility with the required SC-62 or SOT-89 footprint during PCB layout design. Confirm that the application environment remains within the specified junction temperature limits of 150°C to maintain device reliability and prevent stress-induced damage.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 2 A continuous collector current and 100 V breakdown voltage is required. The low VCE(sat) characteristic makes it suitable for power switching applications where conduction losses must be minimized. Consider the 300 MHz gain-bandwidth product if high-frequency switching speeds are necessary for the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to the 2SA2202 series of PNP epitaxial planar silicon transistors produced by onsemi. It is designed as a general-purpose power transistor utilizing advanced semiconductor processing technologies. The device is intended for use in various electronic circuits requiring robust current handling and fast switching characteristics within a compact surface-mount package.

Single Bipolar Transistors Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pinouts and absolute maximum ratings before substituting any alternative components to ensure functional equivalence and system safety.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The maximum continuous collector current (IC) is rated at 2 A.

What is the DC current gain range?

The DC current gain (hFE) ranges from a minimum of 200 to a maximum of 400 under specified test conditions.

What package style does the TD-E suffix indicate?

The TD-E suffix indicates the PCP package, which corresponds to JEITA/JEDEC standards SC-62, SOT-89, or TO-243.