2SA673C-E

Single Bipolar Transistors Overview

The 2SA673C-E is a PNP silicon small-signal transistor manufactured by Renesas Electronics Corporation. It is housed in a TO-92 cylindrical plastic package with three through-hole terminals. The device supports a maximum collector current of 0.5 A and a collector-emitter voltage rating of 35 V. It features a minimum DC current gain (hFE) of 160, ensuring reliable amplification performance for general-purpose electronic applications.

Single Bipolar Transistors Feature Summary

• PNP polarity configuration for signal processing
• Silicon semiconductor construction
• Through-hole mounting capability

Single Bipolar Transistors Applications

• Amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'E' against official Renesas documentation to confirm if it denotes a specific tape-and-reel packaging variant or environmental compliance status distinct from standard bulk versions. Confirm RoHS compliance details directly with the manufacturer's datasheet before procurement.

Single Bipolar Transistors Selection Notes

Select this component for low-voltage PNP switching or linear amplification tasks requiring moderate current handling. Ensure the circuit design accommodates the 35 V collector-emitter breakdown voltage and the thermal characteristics inherent to the TO-92 package form factor.

Single Bipolar Transistors Part Context

This part belongs to the Renesas discrete transistor portfolio, specifically categorized under small-signal silicon devices. It serves as a fundamental active component within broader analog and mixed-signal system designs provided by the manufacturer.