2SA733-K-AP

Single Bipolar Transistors Overview

The MCC 2SA733-K-AP is a PNP silicon plastic-encapsulated transistor in a TO-92 package. It features a collector-emitter breakdown voltage of -50V and a collector-base breakdown voltage of -60V. The device supports a maximum collector current of 0.1A and power dissipation of 0.25W. The 'K' suffix designates a DC current gain (hFE) range of 300 to 600 at IC=-1.0mA and VCE=-6.0V. Operating junction temperature ranges from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain classification for sensitive amplification applications
• Robust thermal performance with an operating junction temperature up to 150°C
• Epoxy casing meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• General-purpose small signal amplification
• Switching circuits requiring high gain
• Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '-AP' corresponds to Ammo Pack packaging when sourcing. Confirm the 'K' rank designation matches the required hFE gain range of 300 to 600 for the intended circuit design. Ensure compliance with RoHS standards as indicated by the manufacturer's documentation.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high current gain is required. The K rank provides superior amplification factors compared to lower ranks. Verify that the TO-92 through-hole package fits the board layout constraints and that the 0.1A current limit satisfies the load requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SA733 series of PNP silicon transistors manufactured by Micro Commercial Components. The series includes variants distinguished by gain rankings such as R, Q, P, and K. The 2SA733-K variant specifically targets applications demanding higher beta values within the standard TO-92 form factor.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other 2SA733 variants with different gain rankings (R, Q, P) if the specific K-rank gain is not critical. Cross-reference with generic PNP switching transistors having similar VCEO, IC, and package specifications.