2SA812-M4-AP

Description：TRANS PNP 50V 0.1A SOT-23
Series：-

SKU:1a70a7744119 Category: Single Bipolar Transistors Brand: MCC (Micro Commercial Components)

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Product introduction

2SA812-M4-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS PNP 50V 0.1A SOT-23. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA812-M4-AP

Description：TRANS PNP 50V 0.1A SOT-23
Series：-
Mfr：MCC (Micro Commercial Components)
Package：Tape & Box (TB)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：90 @ 1mA, 6V
Power - Max：200 mW
Frequency - Transition：180MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA812-M4-AP

2SA812-M4-AP

Single Bipolar Transistors Overview

The MCC 2SA812-M4-AP is a PNP silicon epitaxial transistor housed in an SOT-23 package. It features a collector-emitter voltage (VCEO) of -50 V and a maximum collector current (IC) of -100 mA, with a collector power dissipation of 200 mW. The device offers a high DC current gain (hFE) ranging from 90 to 180 at IC = -1 mA and VCE = -6 V. Key electrical parameters include a collector-base voltage (VCBO) of -60 V, emitter-base voltage (VEBO) of -5.0 V, and a transition frequency (fT) of 180 MHz. Operating temperatures range from -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

High DC current gain for effective signal amplification
High voltage capability suitable for various switching applications
Low leakage current characteristics ensuring stable operation

Single Bipolar Transistors Applications

General-purpose amplification circuits
Switching applications requiring low power consumption
Signal processing stages in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the M4 suffix corresponds to the specified hFE binning range of 90 to 180 during procurement. Confirm RoHS compliance status if required by your manufacturing standards. Ensure sourcing from authorized distributors to guarantee component authenticity and traceability. Check packaging options such as tape and reel availability for automated assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate voltage ratings and high current gain is required in a compact SOT-23 footprint. Consider the thermal dissipation limits of 200 mW for circuit design. Evaluate the hFE variation across the specified range to ensure adequate margin for your specific application requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SA812 series of PNP silicon epitaxial transistors manufactured by Micro Commercial Components. The series includes variants with different hFE bins, designated by suffixes such as M5, M6, and M7. These transistors are designed for general-purpose use in low-power electronic circuits.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include the 2SA812-M5, 2SA812-M6, and 2SA812-M7, which share identical electrical ratings but differ in DC current gain ranges. Verify pinout compatibility and package dimensions before substitution.