Single Bipolar Transistors 2SA812-M5-AP product image

2SA812-M5-AP

  • Description:TRANS PNP 50V 0.1A SOT-23
  • Series:-

SKU:d42d254e14ba Category: Brand:

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2SA812-M5-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS PNP 50V 0.1A SOT-23. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA812-M5-AP

  • Description:TRANS PNP 50V 0.1A SOT-23
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:135 @ 1mA, 6V
  • Power - Max:200 mW
  • Frequency - Transition:180MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA812-M5-AP

2SA812-M5-AP

Single Bipolar Transistors Overview

The 2SA812-M5-AP is a PNP silicon epitaxial transistor manufactured by Micro Commercial Components. It operates with a collector-emitter voltage of -50V and a collector-base voltage of -60V. The device supports a continuous collector current of -100mA and dissipates up to 200mW of power. Junction temperature ranges from -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) between 135 and 270 at -1mA, a saturation voltage of -0.3V at -100mA, and a transition frequency of 180MHz.

Single Bipolar Transistors Feature Summary

  • High DC current gain ranging from 90 to 600 depending on the specific sub-model classification
  • Designed for high-voltage applications with a collector-emitter breakdown of -50V
  • Utilizes SOT-23 surface-mount packaging for compact circuit integration

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Amplifier stages requiring PNP topology
  • Low-power signal processing applications

Single Bipolar Transistors Procurement Notes

Verify the M5 suffix corresponds to the required hFE range of 135 to 270. Confirm the AP designation aligns with your supply chain requirements. Ensure compliance with RoHS standards if applicable. Check datasheet specifications against your thermal management needs. Validate component authenticity through authorized channels.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate voltage ratings and low current capacity is needed. The M5 variant offers a specific gain band suitable for consistent amplification. Consider the SOT-23 package constraints for board space. Evaluate the 200mW dissipation limit for thermal design. Compare against complementary NPN models for push-pull configurations.

Single Bipolar Transistors Part Context

This part belongs to the 2SA812 series of PNP silicon epitaxial transistors produced by Micro Commercial Components. The series includes variants distinguished by gain classifications such as M4, M5, M6, and M7. These components are designed for general electronic applications requiring reliable small-signal performance in a compact footprint.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include the 2SA812-M4, 2SA812-M6, and 2SA812-M7, which share identical electrical ratings but differ in DC current gain ranges. Verify that the alternative gain band meets your circuit's biasing requirements before substitution.

2SA812-M5-AP2SA812-M5-AP

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