2SA812-M6-TP

Single Bipolar Transistors Overview

The MCC 2SA812-M6-TP is a PNP silicon epitaxial transistor housed in an SOT-23 package. It features a maximum collector-emitter voltage (VCEO) of -50 V, a collector-base voltage (VCBO) of -60 V, and an emitter-base voltage (VEBO) of -5 V. The device supports a continuous collector current (IC) of -100 mA with a power dissipation (PD) of 200 mW at 25°C. Operating junction temperature ranges from -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 90 to 600 depending on the bin, a transition frequency (fT) of 180 MHz, and a base-emitter saturation voltage (VBE) of -0.68 V.

Single Bipolar Transistors Feature Summary

• High DC current gain for efficient signal amplification
• Halogen-free 'Green' device compliant with environmental standards
• Lead-free finish and RoHS compliant construction
• Moisture sensitivity level 1 classification

Single Bipolar Transistors Applications

• General-purpose switching applications
• Small-signal amplification circuits
• Low-power electronic devices requiring compact packaging

Single Bipolar Transistors Procurement Notes

Verify the M6 marking code corresponds to the specific hFE bin required for your circuit design, as gain varies significantly across ranks. Confirm the -TP suffix indicates tape-and-reel packaging containing 3,000 pieces per reel. Ensure sourcing channels are authorized distributors to guarantee part authenticity and traceability, as counterfeiting risks exist in the semiconductor market.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP transistor with moderate voltage ratings and high current gain is needed. The SOT-23 package suits space-constrained designs. Consider the hFE bin (M4-M7) during selection to match amplifier linearity requirements. Verify thermal management capabilities, as power dissipation decreases with rising ambient temperature according to the derating curve.

Single Bipolar Transistors Part Context

This component belongs to Micro Commercial Components' lineup of small-signal bipolar junction transistors. The 2SA812 series utilizes PNP silicon epitaxial technology optimized for low-power applications. The M6 suffix specifically denotes the hFE gain ranking within the product family, distinguishing it from other gain bins like M4, M5, or M7 which share identical electrical limits but differ in amplification factors.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult manufacturer cross-reference guides for compatible PNP transistors with similar VCEO, IC, and package specifications.