2SA854STPQ

Single Bipolar Transistors Overview

The ROHM 2SA854STPQ is a PNP silicon epitaxial planar medium power transistor designed for low-voltage operation. It features a maximum collector current of -0.5A and a collector-emitter voltage rating of -32V. The device offers a low collector-emitter saturation voltage, making it suitable for efficient switching applications. DC current gain (hFE) is classified into two ranges: QR type provides 120 to 270, while Q type provides 180 to 390. It operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Epitaxial planar structure with large collector current capability
• Low collector-emitter saturation voltage optimized for low-voltage circuits
• Complements the NPN 2SC1741S transistor pair

Single Bipolar Transistors Applications

• General-purpose amplification
• Switching circuits in consumer electronics
• Audio visual equipment
• Office automation devices

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin (QR or Q) required for your design, as these represent distinct gain classifications. Confirm that the SPT package dimensions align with your PCB footprint requirements. Ensure the operating environment remains within standard electronic equipment reliability standards, avoiding extreme safety-critical applications without prior consultation with the manufacturer.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate current handling and low saturation voltage is needed. It serves as a direct complement to the 2SC1741S NPN transistor. Consider the hFE classification based on the required gain consistency for your amplifier or switch design. Verify thermal management capabilities against the specified power dissipation limits at expected ambient temperatures.

Single Bipolar Transistors Part Context

This transistor belongs to ROHM's medium power transistor lineup, utilizing a silicon epitaxial planar process. It is housed in an SPT (EIAJ SC-72) through-hole package. The device is intended for general electronic equipment such as audio-visual gear and office automation tools, rather than automotive or high-reliability industrial sectors.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly states that the 2SA854S complements the 2SC1741S. No other direct substitute part numbers are listed in the provided documentation.

Single Bipolar Transistors FAQ

What is the difference between the QR and Q types?

The QR and Q types differ in their DC current gain (hFE) classification. The QR type has an hFE range of 120 to 270, while the Q type has a higher range of 180 to 390.

Is this component suitable for automotive applications?

No. The appendix specifies that the product is designed for ordinary electronic equipment like audio-visual and office automation devices, not for equipment requiring extremely high reliability such as transportation equipment.

What is the maximum collector-base voltage?

The absolute maximum rating for collector-base voltage (VCBO) is -40V.