Single Bipolar Transistors 2SA949-Y,ONK-1F(M product image

2SA949-Y,ONK-1F(M

  • Description:TRANS PNP 150V 0.05A TO-92MOD
  • Series:-

SKU:5559a3b05a22 Category: Brand:

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2SA949-Y,ONK-1F(M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 150V 0.05A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA949-Y,ONK-1F(M

  • Description:TRANS PNP 150V 0.05A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • Power - Max:800 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA949-Y,ONK-1F(M

2SA949-Y,ONK-1F(M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA949 is a silicon PNP triple diffused type transistor designed for driver-stage audio amplifier and high-voltage switching applications. It features a collector-emitter voltage (VCEO) of -150 V, a maximum collector current (IC) of -50 mA, and a collector power dissipation (PC) of 800 mW at 25°C ambient temperature. The device exhibits a typical transition frequency (fT) of 120 MHz and a low output capacitance (Cob) of 4.0 pF. DC current gain (hFE) ranges from 70 to 240 depending on the classification suffix.

Single Bipolar Transistors Feature Summary

  • High breakdown voltage capability with a collector-emitter voltage rating of -150 V
  • Low output capacitance characteristic suitable for high-frequency operation
  • High transition frequency performance optimized for driver-stage applications

Single Bipolar Transistors Applications

  • Driver-stage audio amplifiers
  • High-voltage switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (e.g., Y or ONK-1F(M)) against the manufacturer's datasheet to confirm the exact DC current gain (hFE) binning range required for your design. Confirm RoHS compliance status directly with Toshiba sales representatives, as environmental compatibility varies by production lot and marking configuration.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling up to 150 V combined with moderate current capabilities around 50 mA. Ensure the thermal design accommodates the 800 mW power dissipation limit within the specified junction temperature range of -55°C to 150°C. Verify that the package dimensions align with the JEDEC TO-92MOD footprint requirements.

Single Bipolar Transistors Part Context

This component belongs to the family of silicon PNP triple diffused transistors manufactured by Toshiba Semiconductor and Storage. These devices are engineered specifically for general electronics applications, including computers, office equipment, and home appliances, while strictly excluding unintended uses such as nuclear or aerospace systems.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on electrical parameters without confirming pinout and package alignment.

2SA949-Y,ONK-1F(M2SA949-Y,ONK-1F(M

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