2SA965-O,F(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA965-O,F(J) is a silicon PNP epitaxial planar transistor manufactured using the PCT process. It features a maximum collector-emitter voltage of -120 V, a continuous collector current rating of -800 mA, and a collector power dissipation of 900 mW at 25°C ambient temperature. The device exhibits a transition frequency of 120 MHz and a DC current gain (hFE) ranging from 80 to 240 depending on the specific bin classification. It is housed in a JEDEC TO-92MOD plastic package with a junction temperature rating of 150°C.

Single Bipolar Transistors Feature Summary

• Utilizes silicon epitaxial planar technology for stable performance
• Designed for high-voltage switching and amplification tasks
• Compatible with complementary NPN devices for push-pull configurations

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver-stage amplifier applications
• General-purpose switching circuits

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to confirm binning specifications and environmental compliance status. Confirm RoHS compatibility directly with Toshiba sales representatives as indicated in the datasheet markings section. Ensure the component meets the intended application requirements regarding absolute maximum ratings and thermal derating curves before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP transistor with a 120V breakdown voltage and moderate current handling capabilities. Consider the hFE classification requirements when designing bias networks, as gain varies between 80 and 240. Ensure adequate heat sinking or layout considerations are applied if operating near the 900 mW power dissipation limit, particularly at elevated ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of small-signal PNP transistors. It is specifically noted as being complementary to the 2SC2235 NPN transistor, facilitating balanced design in push-pull output stages. The device is intended for general electronics applications such as computers, office equipment, and home appliances, excluding high-reliability automotive or medical uses.

Single Bipolar Transistors Replacement Considerations

The 2SC2235 is documented as the complementary NPN counterpart. Verify pinout compatibility and electrical parameter overlaps with other generic TO-92 PNP transistors having similar voltage and current ratings before substitution.

Single Bipolar Transistors FAQ

What is the complementary transistor for the 2SA965?

The 2SA965 is designed to be complementary to the 2SC2235 NPN transistor.

What is the maximum collector-base voltage rating?

The absolute maximum collector-base voltage (VCBO) is rated at -120 V.

How is the DC current gain classified?

The DC current gain (hFE) is classified into bins, typically ranging from 80 to 160 or 120 to 240 depending on the specific ordering suffix and binning.