2SA965-Y,SWFF(M

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA965-Y,SWFF(M) is a silicon PNP epitaxial planar transistor manufactured using the PCT process. It features a TO-92MOD package with a collector connected to the case. The device supports a maximum collector current of -800 mA and a collector-emitter voltage of -120 V. The transition frequency is typically 120 MHz at -100 mA. The 'Y' suffix indicates a DC current gain (hFE) classification of 120 to 240.

Single Bipolar Transistors Feature Summary

• Utilizes an epitaxial planar structure for enhanced reliability and performance stability under varying operating conditions.
• Features a low saturation voltage characteristic suitable for efficient switching and amplification applications.
• Designed as a complementary pair to the 2SC2235 NPN transistor for matched circuit configurations.

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver-stage amplifier applications

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required hFE binning specifications. Confirm RoHS compatibility status directly with the manufacturer or authorized distributor, as environmental compliance details are subject to specific production lot variations and require direct inquiry.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -120 V breakdown voltage and up to -800 mA continuous current capability is required. Ensure the application operates within the 900 mW power dissipation limit and consider thermal derating for ambient temperatures exceeding 25°C.

Single Bipolar Transistors Part Context

This component belongs to the 2SA965 series of general-purpose bipolar junction transistors. It is specifically engineered for use in audio and signal processing stages where moderate power handling and high current gain are necessary. The TO-92MOD package provides a cost-effective solution for through-hole mounting.

Single Bipolar Transistors Replacement Considerations

The 2SC2235 is documented as the complementary NPN counterpart. Verify pinout compatibility and electrical parameters against other available PNP transistors before substitution.

Single Bipolar Transistors FAQ

What is the DC current gain range for the Y suffix?

The Y suffix designates a DC current gain (hFE) range of 120 to 240 when tested at VCE = -5 V and IC = -100 mA.

How is the collector terminal configured in the TO-92MOD package?

The collector is electrically connected to the metal tab or case of the package, which facilitates heat dissipation and circuit grounding.

Is this transistor intended for automotive or medical applications?

No. The datasheet explicitly restricts use to general electronics applications and prohibits use in equipment requiring extraordinarily high reliability, such as medical devices or automotive safety systems.