2SAR512PT100

Single Bipolar Transistors Overview

The 2SAR512PT100 is a PNP silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of -30 V and a continuous collector current (Ic) of -2 A. The device is housed in an SMD/SMT MPT3 package, equivalent to SOT-89-3. Key electrical parameters include a power dissipation (Pd) of 2 W, a gain-bandwidth product (fT) of 430 MHz, and a collector-emitter saturation voltage of 400 mV. The maximum operating temperature is +150°C.

Single Bipolar Transistors Feature Summary

• High current handling capability with a -2 A continuous collector rating
• Optimized for high-frequency performance with a 430 MHz gain-bandwidth product
• Designed for surface-mount assembly in compact MPT3 packages

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Switching applications requiring moderate voltage isolation
• Power management modules within industrial equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure compatibility with required packaging formats such as cut tape or reel. Confirm that the component meets all relevant RoHS and REACH regulatory standards applicable to the target market before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require a PNP transistor capable of handling -2 A currents at -30 V ratings. The 430 MHz fT makes it suitable for applications demanding faster switching speeds compared to standard low-frequency transistors. Ensure thermal management strategies account for the 2 W power dissipation limit in the selected package configuration.

Single Bipolar Transistors Part Context

This part belongs to the 2SAR series of middle-power transistors from ROHM Semiconductor. These devices are engineered for robust performance in general-purpose electronic applications. The series offers various voltage and current combinations to suit different design requirements while maintaining consistent reliability standards across the product line.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Direct replacements must match the -30 V / -2 A PNP specification and SOT-89-3 form factor.