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2SAR523EBTL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 50V 0.1A EMT3F. Review the specifications below when checking this part for your BOM.
The 2SAR523EBTL is a single PNP bipolar junction transistor manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an EMT3F (SOT-416FL) surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. Key electrical parameters include a gain-bandwidth product of 300 MHz, a power dissipation rating of 150 mW, and a DC current gain ranging from 120 to 560 at -1 mA and -6 V. The component operates within a temperature range up to +150°C.
Verify the specific suffix 'EBTL' against official ROHM documentation to confirm the exact tape-and-reel packaging configuration and marking codes. Ensure that the EMT3F package dimensions match the target PCB land pattern. Cross-reference the RoHS compliance status with the latest environmental declarations prior to final procurement approval.
Select this component when a small-form-factor PNP transistor is required for low-voltage, low-current amplification tasks. The 300 MHz transition frequency supports moderate-speed signal handling. Consider the 150 mW thermal limit for power dissipation calculations. This part serves as a direct functional alternative to other devices within the 2SAR523 series sharing identical electrical ratings and pinout configurations.
This device belongs to the 2SAR523 series of general-purpose NPN/PNP transistors designed for consumer electronics and industrial control systems. The series emphasizes compactness and reliability in small-signal applications. The 2SAR523EBTL specifically represents the PNP variant within this family, offering standardized performance characteristics compatible with common logic-level driving voltages.
Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with generic equivalents based on matching VCEO, IC, and hFE specifications before substitution.
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