2SAR523UBTL

Single Bipolar Transistors Overview

The 2SAR523UBTL is a PNP silicon epitaxial planar transistor manufactured by ROHM Semiconductor, designed for general-purpose amplification. It features a UMT3F (SOT-323FL) surface-mount package with three terminals. Key electrical specifications include a collector-emitter voltage (VCEO) of -50 V, a collector-base voltage (VCBO) of -50 V, and an emitter-base voltage (VEBO) of -5 V. The maximum continuous collector current is -100 mA, with a power dissipation rating of 200 mW. The device offers a DC current gain (hFE) ranging from 120 to 560 at -1 mA and -6 V, and a transition frequency (fT) of 300 MHz. It operates within a junction temperature range up to +150°C.

Single Bipolar Transistors Feature Summary

• General-purpose amplification capability utilizing PNP silicon epitaxial planar technology.
• Compact SMD form factor suitable for space-constrained surface-mount applications.
• High DC current gain range supporting efficient signal amplification.
• Robust thermal performance with a maximum operating junction temperature of +150°C.

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Switching applications in consumer electronics
• Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the tape-and-reel packaging quantity, which is typically 3000 units per reel. Ensure compatibility with the UMT3F footprint during PCB layout. Confirm RoHS compliance status through the official datasheet before integration. Check for any automotive qualification restrictions if the application requires high reliability standards beyond standard industrial grades.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a compact PNP transistor with moderate voltage handling and low-power dissipation. The 300 MHz transition frequency makes it suitable for audio and general RF amplification tasks. Compare hFE ranges against circuit requirements to ensure sufficient gain. Consider the -50 V breakdown voltage when designing for higher supply rails or inductive load switching scenarios.

Single Bipolar Transistors Part Context

This part belongs to the 2SAR523UB series of general-purpose amplification transistors from ROHM. It is distinct from the complementary NPN type, 2SCR523UBTL, which shares similar electrical characteristics but opposite polarity. The series emphasizes energy efficiency and high reliability in small packages, targeting portable devices and general electronic equipment where board space is limited.

Single Bipolar Transistors Replacement Considerations

Direct pin-compatible substitutes may include other PNP transistors in the SOT-323 package with similar VCEO and Ic ratings. Verify that alternative parts meet the 300 MHz fT requirement and 200 mW power dissipation limit. Ensure the replacement maintains the same hFE gain range for consistent circuit performance.