2SAR586JFRGTLL

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SAR586JFRGTLL is a single PNP bipolar junction transistor (BJT) designed for power driver applications. It operates within a TO-252-3 surface-mount package and utilizes silicon technology. The device supports a collector-emitter voltage of 80 V and handles a continuous collector current of -5 A. Key electrical parameters include a maximum power dissipation of 10 W, a DC current gain ranging from 120 to 390 at -500 mA, and a transition frequency of 200 MHz. The component features a low collector-emitter saturation voltage of 320 mV and functions reliably up to a maximum operating temperature of +150°C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage suitable for efficient power driving
• High DC current gain for effective signal amplification
• Robust thermal performance with high maximum operating temperature

Single Bipolar Transistors Applications

• Power driver circuits
• Low-frequency amplification

Single Bipolar Transistors Procurement Notes

Verify the supply status before procurement as this component may be marked as not recommended for new designs. Confirm that the specific ordering suffix matches the required packaging format. Ensure compatibility with existing circuit designs due to potential end-of-life constraints. Cross-reference the datasheet for any recent updates regarding automotive qualification or RoHS compliance prior to finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a PNP power transistor with high current handling capabilities in a compact surface-mount form factor. Consider the 80 V rating and 5 A current limit when designing power stages. Evaluate the thermal management requirements given the 10 W power dissipation capability. Compare against complementary NPN types if push-pull configurations are necessary for the specific application design.

Single Bipolar Transistors Part Context

This part belongs to the ROHM Semiconductor 2SAR series of PNP power transistors. It is often paired with complementary NPN devices like the 2SCR586J for balanced driver circuits. The series is engineered for robust performance in power switching and amplification tasks, offering a balance between high current capacity and low saturation voltage in standard industrial packages.

Single Bipolar Transistors Replacement Considerations

The 2SAR586D3FRA is listed as a recommended alternative with similar specifications and package type. Verify pinout compatibility and electrical parameter alignment before substitution. Check the supply status of both components to ensure long-term availability for production needs.