2SAR587D3TL1

Single Bipolar Transistors Overview

The 2SAR587D3TL1 is a PNP power transistor manufactured by Rohm Semiconductor, housed in a TO-252 (DPAK) surface-mount package. It features a collector-emitter voltage of -120V and a continuous collector current of -3.0A with 10W power dissipation. The device offers a DC current gain (hFE) range of 120 to 390 and a maximum saturated collector-emitter voltage of -200mV at specified test conditions.

Single Bipolar Transistors Feature Summary

• Low VCE(sat) characteristic optimized for efficient power switching
• Suitable for low-frequency amplifier applications
• Designed as a complementary pair to the 2SCR587D3 NPN transistor

Single Bipolar Transistors Applications

• Power driver circuits
• Low-frequency amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TL1 against the required tape-and-reel quantity of 2500 units. Confirm RoHS compliance status and ensure the TO-252 package dimensions match the target PCB footprint. Check for automotive qualification requirements, as standard versions may not be suitable for such environments.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage PNP switch is needed with low saturation loss. Ensure the thermal management design supports 10W dissipation in the DPAK package. Verify that the -120V rating exceeds the circuit's peak voltage demands and that the hFE range meets the base drive requirements.

Single Bipolar Transistors Part Context

This part belongs to Rohm's low VCE(sat) power transistor series, designed for general-purpose power switching. It serves as the PNP counterpart to the 2SCR587D3, allowing for complementary push-pull configurations in audio or motor driver circuits where low on-state voltage drop is critical for efficiency.

Single Bipolar Transistors Replacement Considerations

The 2SCR587D3 is its complementary NPN type. No direct pin-compatible substitutes are listed in the provided documentation.