2SB0621ARA

Single Bipolar Transistors Overview

The Panasonic 2SB0621ARA is a silicon PNP epitaxial planar transistor designed for low-frequency driver amplification. It features a TO-92B-B1 package with an emitter, collector, and base pinout. Key electrical ratings include a collector-base voltage of -60 V, collector-emitter voltage of -50 V, and emitter-base voltage of -5 V. The device supports a continuous collector current of -1 A and a peak current of -1.5 A, with a power dissipation of 750 mW at 25°C. Transition frequency reaches 200 MHz, while saturation voltages are specified at -0.4 V (VCE) and -1.2 V (VBE) under standard test conditions.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching
• High transition frequency suitable for driver applications
• Complementary pairing with the 2SD0592A NPN transistor

Single Bipolar Transistors Applications

• Low-frequency driver amplification circuits
• General-purpose electronic equipment
• Household appliances
• Communications equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'ARA' against official Panasonic documentation to confirm exact binning or packaging specifications. Confirm RoHS compliance status as required by your manufacturing standards. Check the manufacturer's website for the latest lifecycle stage information, as maintenance or discontinuation notices may affect long-term availability.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high transition frequency and low saturation voltage is required for driver stages. Ensure the application operates within the -50 V collector-emitter limit and does not exceed the 750 mW power dissipation rating without thermal derating. Verify that the TO-92B-B1 package dimensions fit the intended PCB layout constraints.

Single Bipolar Transistors Part Context

This device belongs to the Panasonic silicon PNP epitaxial planar transistor series. It is specifically engineered for low-frequency driver amplification tasks. The part is designed to operate in conjunction with complementary NPN transistors, such as the 2SD0592A, to form push-pull amplifier configurations or balanced driver circuits in general electronic systems.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SD0592A as the complementary NPN counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The absolute maximum continuous collector current is -1 A, with a peak collector current rating of -1.5 A.

How is the hFE gain classified?

The forward current transfer ratio (hFE) is classified into ranks Q, R, and S based on specific current ranges, with values ranging from 85 to 340 depending on the rank and operating conditions.

What is the transition frequency specification?

The transition frequency (fT) is specified at 200 MHz under conditions of VCB = -10 V and IE = 50 mA.