Single Bipolar Transistors 2SB0710A0L product image

2SB0710A0L

$0.35
  • Description:TRANS PNP 50V 0.5A MINI3-G1
  • Series:-

SKU:bb16092376cd Category: Brand:

  
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2SB0710A0L is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS PNP 50V 0.5A MINI3-G1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB0710A0L

  • Description:TRANS PNP 50V 0.5A MINI3-G1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 150mA, 10V
  • Power - Max:200 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:Mini3-G1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB0710A0L

2SB0710A0L

Single Bipolar Transistors Overview

The Panasonic 2SB0710A0L is a silicon PNP epitaxial planar transistor designed for general amplification. It operates with a collector-emitter voltage of -50 V and supports a maximum collector current of 0.5 A, with peak currents reaching 1 A. The device features a forward current transfer ratio (hFE) ranging from 85 to 340 depending on the rank classification. Electrical characteristics include a transition frequency of 200 MHz and a collector output capacitance of up to 15 pF. It utilizes the Mini3-G1 package and complies with RoHS directives.

Single Bipolar Transistors Feature Summary

  • Miniature package design facilitates equipment downsizing and enables automatic insertion via tape packing.
  • Capable of handling large collector currents suitable for general amplification tasks.

Single Bipolar Transistors Applications

  • General electronic equipment amplification
  • Office equipment signal processing
  • Communications equipment circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Panasonic documentation to confirm exact packaging and ranking specifications. Confirm that the component meets the required environmental standards for your application. Check the manufacturer's website for the latest lifecycle status, as this product may be subject to maintenance or discontinuation phases.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP transistor with moderate current handling capabilities is required for standard amplification applications. Ensure the operating conditions remain within the absolute maximum ratings, particularly regarding junction temperature and power dissipation limits. Verify compatibility with complementary NPN transistors such as the 2SD0602A if used in push-pull configurations.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SB series of silicon PNP epitaxial planar transistors. These devices are engineered for use in general-purpose electronic circuits where reliable amplification and switching performance are necessary. The series offers various packages and rankings to accommodate different design constraints and performance requirements.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SD0602A as the complementary NPN transistor. Direct replacement requires verifying pinout compatibility and ensuring the substitute part meets the same electrical ratings and package dimensions.

Single Bipolar Transistors FAQ

What is the transition frequency of the 2SB0710A0L?

The transition frequency (fT) is specified at 200 MHz under conditions of VCB = -10 V and IE = 50 mA.

How is the hFE rank classified?

The forward current transfer ratio is classified into ranks Q, R, S, and No-rank based on specific hFE ranges measured at defined collector currents.

What is the maximum collector power dissipation?

The maximum collector power dissipation (PC) is rated at 200 mW at an ambient temperature of 25°C.

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