Single Bipolar Transistors 2SB07740RA product image

2SB07740RA

  • Description:TRANS PNP 25V 0.1A TO-92-B1
  • Series:-

SKU:073d036cfb0a Category: Brand:

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2SB07740RA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS PNP 25V 0.1A TO-92-B1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB07740RA

  • Description:TRANS PNP 25V 0.1A TO-92-B1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:210 @ 2mA, 10V
  • Power - Max:400 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-B1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB07740RA

2SB07740RA

Single Bipolar Transistors Overview

The Panasonic 2SB07740RA is a silicon PNP epitaxial planar transistor designed for low-frequency amplification. It features a TO-92-B1 package with absolute maximum ratings of -30 V collector-base voltage, -25 V collector-emitter voltage, and -15 V emitter-base voltage. The device supports a continuous collector current of -100 mA and a peak current of -200 mA, with a power dissipation of 400 mW at 25°C. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 210 to 460 depending on the rank, a transition frequency of 150 MHz, and a collector output capacitance of 4 pF.

Single Bipolar Transistors Feature Summary

  • High emitter-base voltage rating allows omission of protective diodes and resistances between emitter and base.

Single Bipolar Transistors Applications

  • Low-frequency amplification circuits
  • General electronic equipment
  • Office equipment
  • Communications equipment

Single Bipolar Transistors Procurement Notes

Verify component status as maintenance or discontinued information is subject to change. Consult official manufacturer channels for current lifecycle stages before finalizing procurement plans. Ensure compliance with RoHS directives and standard application guidelines specified in the datasheet.

Single Bipolar Transistors Selection Notes

Select based on required hFE rank (R or S) for specific gain applications. Verify thermal management capabilities given the 400 mW dissipation limit. Confirm compatibility with low-frequency signal processing requirements and standard TO-92 mounting constraints.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SB0774 series of silicon PNP transistors. It utilizes an epitaxial planar structure optimized for general-purpose low-frequency amplification tasks within standard electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing should strictly adhere to electrical parameters and pinout configurations defined by the manufacturer.

Single Bipolar Transistors FAQ

What are the available hFE ranks for this transistor?

The device is available in Rank R (hFE 210 to 340) and Rank S (hFE 290 to 460).

Is protective circuitry needed for the emitter-base junction?

Protective diodes and resistances between the emitter and base can be omitted due to the high emitter-base voltage rating.

What is the maximum collector power dissipation?

The maximum collector power dissipation is 400 mW at an ambient temperature of 25°C.

2SB07740RA2SB07740RA

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