Single Bipolar Transistors 2SB08730R product image

2SB08730R

$0.33
  • Description:TRANS PNP 20V 5A TO-92L-A1
  • Series:-

SKU:8e8188118e44 Category: Brand:

  
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2SB08730R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS PNP 20V 5A TO-92L-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB08730R

  • Description:TRANS PNP 20V 5A TO-92L-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 3A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2A, 2V
  • Power - Max:1 W
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92L-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB08730R

2SB08730R

Single Bipolar Transistors Overview

The Panasonic 2SB0873 is a silicon PNP epitaxial planar transistor designed for low-frequency power amplification, DC-DC converters, and stroboscopes. It operates in a TO-92L-A1 package with a maximum collector current of -5A and peak current of -10A. The device features a collector-emitter voltage rating of -20V and a collector-base voltage of -30V. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 90 to 625 across specific ranks, a transition frequency of 120 MHz, and a collector output capacitance of 85 pF. Maximum power dissipation is 1W at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient switching
  • High collector current capability suitable for power applications
  • Epitaxial planar construction for stable performance

Single Bipolar Transistors Applications

  • Low-frequency power amplification circuits
  • DC-DC converter designs
  • Stroboscope driver circuits

Single Bipolar Transistors Procurement Notes

Verify the current lifecycle status before procurement as this component may be discontinued or under maintenance. Consult official Panasonic semiconductor channels for availability confirmation. Ensure design compliance with absolute maximum ratings during transient states such as power-on or mode-switching to prevent device failure.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high collector current handling up to 5A. Consider the hFE rank requirements based on base drive capabilities. Verify thermal management strategies to maintain junction temperature within the 150°C limit. Confirm compatibility with standard surface mount or through-hole assembly processes depending on the specific PCB layout.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic silicon PNP transistor family intended for general electronic equipment. It is classified for standard applications including office equipment, communications gear, and measuring instruments. It is not recommended for aerospace, automotive safety, or life support systems without explicit manufacturer approval.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as VCEO, IC, and package type. No unauthorized substitutes should be used without verifying functional equivalence.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The continuous collector current is rated at -5A, with a peak collector current capability of -10A.

How is the forward current transfer ratio categorized?

The hFE is divided into three ranks: Rank P (90-135), Rank Q (120-205), and Rank R (180-625).

What is the transition frequency specification?

The transition frequency (fT) is specified at 120 MHz under conditions of VCB = -6V and IE = 50 mA.

2SB08730R2SB08730R
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