2SB09420P

Single Bipolar Transistors Overview

The Panasonic 2SB09420P is a silicon PNP epitaxial planar power transistor designed for low-frequency power amplification. It operates with a maximum collector current of -4 A and peak collector current of -8 A. The device features a collector-emitter voltage rating of -60 V for the standard variant and -80 V for the 'A' suffix version. Packaged in a TO-220F-A1 (SC-67) full-pack configuration, it supports a collector power dissipation of 40 W at 25°C. The component exhibits a transition frequency of 30 MHz and includes high forward current transfer ratio characteristics.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio hFE which has satisfactory linearity
• Large collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one screw

Single Bipolar Transistors Applications

• Low-frequency power amplification
• General electronic equipment such as office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific voltage rating required for the design, as the base model 2SB0942 is rated for -60 V while the 2SB0942A variant supports -80 V. Confirm that the TO-220F-A1 package dimensions align with the thermal management strategy. Ensure compliance with RoHS Directive (EU 2002/95/EC) requirements if applicable to the target market. Check the manufacturer's lifecycle status page for maintenance or discontinuation updates before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust PNP switching or amplification within low-frequency ranges. The TO-220F-A1 package facilitates direct mounting to heat sinks using a single screw, simplifying thermal management for high-power dissipation scenarios. Consider the complementary 2SD1267 series if push-pull amplifier configurations are necessary. Evaluate the hFE rank (R, Q, or P) based on the specific gain requirements of the circuit design.

Single Bipolar Transistors Part Context

This transistor belongs to the Panasonic Power Transistors family, specifically utilizing silicon PNP epitaxial planar technology. It is positioned as a general-purpose power device suitable for standard industrial and consumer electronics. The product line emphasizes reliability and ease of installation through its standardized full-pack housing format.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SD1267 and 2SD1267A transistors as complementary devices for circuit pairing. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the difference between the 2SB0942 and 2SB0942A variants?

The primary difference lies in the voltage ratings. The 2SB0942 has a collector-base voltage (V_CBO) and collector-emitter voltage (V_CEO) of -60 V, whereas the 2SB0942A variant supports higher voltages of -80 V for both parameters.

How is the hFE rank classification determined?

The forward current transfer ratio (hFE) is classified into ranks R, Q, and P based on measurement conditions of V_CE = -4 V and I_C = -1 A. Rank R covers 40 to 90, Rank Q covers 70 to 150, and Rank P covers 120 to 250.

What are the absolute maximum ratings for collector current?

The continuous collector current (I_C) is rated at -4 A, while the peak collector current (I_CP) is rated at -8 A, both measured at a case temperature of 25°C.